Startseite
→
Auflistung nach Schlagwort

Auflistung nach Schlagwort "Semiconducting silicon compounds"

Anzeige der Dokumente 1-6 von 6

Analysis of local Al-doped back surface fields for high efficiency screen-printed solar cells

Gatz, Sebastian; Bothe, Karsten; Müller, Jens; Dullweber, Thorsten; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

In this paper, we investigate the surface recombination of local screen-printed aluminum contacts applied to rear passivated solar cells. We measure the surface recombination velocity by microwave-detected photoconductance ...
Comparison of the thermal stability of single Al2O3 layers and Al2O3/SiNx stacks for the surface passiviation of silicon

Veith, Boris; Werner, Florian; Zielke, Dimitri; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)

We measure surface recombination velocities (SRVs) below 10 cm/s on low-resistivity (1.4 Ωcm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) ...
Experimental setup for camera-based measurements of electrically and optically stimulated luminescence of silicon solar cells and wafers

Hinken, David; Schinke, Carsten; Herlufsen, Sandra; Schmidt, Arne; Bothe, Karsten; Brendel, Rolf (College Park, MD : American Institute of Physics, 2011)

We report in detail on the luminescence imaging setup developed within the last years in our laboratory. In this setup, the luminescence emission of silicon solar cells or silicon wafers is analyzed quantitatively. Charge ...
Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation

Mader, Christoph; Bock, Robert; Müller, Jens; Schmidt, Jan; Brendel, Rolf (Amsterdam : Elsevier BV, 2011)

Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 μm thickness at dynamic deposition rates of 20 μm×m/min on locally laser-ablated Al2O3 ...
High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells

Werner, Florian; Stals, Walter; Görtzen, Roger; Veith, Boris; Brendel, Rolf; Schmidt, Jan (Amsterdam : Elsevier BV, 2011)

High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous ...
Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation

Zeitler, U.; Schumacher, Hans W.; Jansen, A.G.M.; Haug, Rolf J. (College Park, MD : American Physical Society, 2001)

The anisotropies induced by an in-plane field in the magnetotransport properties of coinciding Landau levels in the two dimensional electron system of a silicon/silicon germanium (Si/SiGe) heterostructure were investigated. ...

Anzeige der Dokumente 1-6 von 6

Jetzt Dokument im Repositorium hochladen

Durchblättern

Gesamter Bestand

Mein Nutzer/innenkonto

Nutzungsstatistiken

des Repositoriums

Auflistung nach Schlagwort "Semiconducting silicon compounds"

Auflistung nach Schlagwort "Semiconducting silicon compounds"

Durchblättern

Gesamter Bestand

Mein Nutzer/innenkonto

Nutzungsstatistiken